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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Current injection technique ： ウィキペディア英語版 Current injection technique The current injection technique is a technique developed to reduce the turn-OFF switching transient of power bipolar semiconductor devices. It was developed and published by Dr S. Eio of Staffordshire University (United Kingdom) in 2007. == Background == The Turn-OFF switching transient of silicon-based power bipolar semiconductor devices, caused by stored charge in the device during the forward conduction state, limits switching speed of the device, which in turn limits the efficiency of the application it is used within. Different techniques, such as carrier lifetime control, injection efficiency and buffer layer devices, have been used to minimize turn-OFF switching transient, but all result in a trade-off between the ON-state loss and switching speed. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Current injection technique」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.